Schäffler, I. : rechercher sur Z-Library

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1

Experimental Evaluation of Heavy Fan-High-Pressure Compressor Interaction in a Three-Shaft Engine: Part 1—Experimental Setup and Results

Schäffler, A., Miatt, D. C.

Journal:

Journal of Engineering for Gas Turbines and Power

Année:

1985

Langue:

english

Fichier:

PDF, 676 KB

english, 1985

2

Experimental Evaluation of Heavy Fan-High-Pressure Compressor Interaction in a Three-Shaft Engine: Part II—Analysis of Distortion and Fan Loading

Schäffler, A., Miatt, D. C.

Journal:

Journal of Engineering for Gas Turbines and Power

Année:

1986

Langue:

english

Fichier:

PDF, 468 KB

english, 1986

3

Holographic detection of parity in atomic and molecular orbitals

Kang, HuiPeng, Maxwell, Andrew S., Trabert, Daniel, Lai, XuanYang, Eckart, Sebastian, Kunitski, Maksim, SchÃ¶ffler, Markus, Jahnke, Till, Bian, XueBin, DÃ¶rner, Reinhard, Faria, Carla Figueira de Mori

Journal:

Physical Review A

Année:

2020

Fichier:

PDF, 1.60 MB

2020

4

Investigating unlearning and forgetting in organizations

Kluge, Annette, SchÃ¼ffler, Arnulf Sebastian, Thim, Christof, Haase, Jennifer, Gronau, Norbert

Journal:

The Learning Organization

Année:

2019

Fichier:

PDF, 179 KB

2019

5

Accelerated Aging and Contact Degradation of CIGS Solar Cells

Ott, T., Walter, T., Hariskos, D., Kiowski, O., Schäffler, R.

Journal:

IEEE Journal of Photovoltaics

Année:

2013

Langue:

english

Fichier:

PDF, 779 KB

english, 2013

6

Validation of a digital pathology system including remote review during the COVID-19 pandemic

Hanna, Matthew G., Reuter, Victor E., Ardon, Orly, Kim, David, Sirintrapun, Sahussapont Joseph, SchÃ¼ffler, Peter J., Busam, Klaus J., Sauter, Jennifer L., Brogi, Edi, Tan, Lee K., Xu, Bin, Bale, Teju

Journal:

Modern Pathology

Année:

2020

Fichier:

PDF, 1.20 MB

2020

7

Ultrafast manipulation of the weakly bound helium dimer

Kunitski, Maksim, Guan, Qingze, Maschkiwitz, Holger, Hahnenbruch, JÃ¶rg, Eckart, Sebastian, Zeller, Stefan, Kalinin, Anton, SchÃ¶ffler, Markus, Schmidt, Lothar Ph. H., Jahnke, Till, Blume, DÃ¶rte, DÃ¶

Journal:

Année:

2020

Fichier:

PDF, 1.69 MB

2020

8

D-band Si-IMPATT diodes with 300 mW CW output power at 140 GHz

Wollitzer, M., Buechler, J., Schäffler, F., Luy, J.-F.

Journal:

Electronics Letters

Année:

1996

Langue:

english

Fichier:

PDF, 388 KB

english, 1996

9

Teichoic acids in cell walls of strains of the ânicotianaeâ group of Arthrobacter: a chemotaxonomic marker

Fiedler, Franz, SchÃ¤ffler, Maximilian J.

Journal:

Systematic and Applied Microbiology

Année:

1987

Langue:

english

Fichier:

PDF, 944 KB

english, 1987

10

Comparison of theoretical and experimental 60 GHz silicon IMPATT diode performance

Banerjee, J.P., Luy, J.F., Schäffler, F.

Journal:

Electronics Letters

Année:

1991

Langue:

english

Fichier:

PDF, 281 KB

english, 1991

11

Influence of thermal annealing on the electron mobility in modulation doped Si/SiGe heterostructures

Schäffler, F.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

1991

Langue:

english

Fichier:

PDF, 972 KB

english, 1991

12

Solid-phase epitaxial regrowth of Sb-implanted Si1−xGex strained layers: Kinetics and electrical properties

Atzmon, Z., Eizenberg, M., Shacham-Diamand, Y., Mayer, J. W., Schäffler, F.

Journal:

Journal of Applied Physics

Année:

1994

Langue:

english

Fichier:

PDF, 1.31 MB

english, 1994

13

Anisotropy of g-factor and electron spin resonance linewidth in modulation doped SiGe quantum wells

Malissa, H., Jantsch, W., Mühlberger, M., Schäffler, F., Wilamowski, Z., Draxler, M., Bauer, P.

Journal:

Applied Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 310 KB

english, 2004

14

Ordering of Ge islands on hill-patterned Si (001) templates

Chen, Gang, Vastola, G., Lichtenberger, H., Pachinger, D., Bauer, G., Jantsch, W., Schäffler, F., Miglio, Leo

Journal:

Applied Physics Letters

Année:

2008

Langue:

english

Fichier:

PDF, 798 KB

english, 2008

15

Thermal annealing of modulation-doped Si/SiGe heterostructures with high electron mobilities

Schäffler, F., Jorke, H.

Journal:

Applied Physics Letters

Année:

1991

Langue:

english

Fichier:

PDF, 678 KB

english, 1991

16

Summary Abstract: Metal-induced impurity states at the InP/transition-metal interface

Schäffler, F.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Année:

1987

Langue:

english

Fichier:

PDF, 520 KB

english, 1987

17

Modulation of the high mobility two-dimensional electrons in Si∕SiGe using atomic-layer-deposited gate dielectric

Lai, K., Ye, P. D., Pan, W., Tsui, D. C., Lyon, S. A., Mühlberger, M., Schäffler, F.

Journal:

Applied Physics Letters

Année:

2005

Langue:

english

Fichier:

PDF, 384 KB

english, 2005

18

Growth conditions for complete substitutional carbon incorporation into Si[sub 1−y]C[sub y] layers grown by molecular beam epitaxy

Zerlauth, S., Seyringer, H., Penn, C., Schäffler, F.

Journal:

Applied Physics Letters

Année:

1997

Langue:

english

Fichier:

PDF, 428 KB

english, 1997

19

Evolution of shape, height, and in-plane lattice constant of Ge-rich islands during capping with Si

Z. Zhong, J. Stangl, F. Schäffler, G. Bauer

Année:

2003

Langue:

english

Fichier:

PDF, 625 KB

english, 2003

20

Intersubband absorption in the conduction band of Si/Si1−xGex multiple quantum wells

Hertle, H., Schuberth, G., Gornik, E., Abstreiter, G., Schäffler, F.

Journal:

Applied Physics Letters

Année:

1991

Langue:

english

Fichier:

PDF, 602 KB

english, 1991

21

Lattice parameter in Si[sub 1−y]C[sub y] epilayers: Deviation from Vegard’s rule

Berti, M., De Salvador, D., Drigo, A. V., Romanato, F., Stangl, J., Zerlauth, S., Schäffler, F., Bauer, G.

Journal:

Applied Physics Letters

Année:

1998

Langue:

english

Fichier:

PDF, 361 KB

english, 1998

22

Enhanced intermixing in Ge nanoprisms on groove-patterned Si(1 1 10) substrates

Chen, G., Vastola, G., Zhang, J. J., Sanduijav, B., Springholz, G., Jantsch, W., Schäffler, F.

Journal:

Applied Physics Letters

Année:

2011

Langue:

english

Fichier:

PDF, 1.07 MB

english, 2011

23

PbTe and SnTe quantum dot precipitates in a CdTe matrix fabricated by ion implantation

Kaufmann, E., Schwarzl, T., Groiss, H., Hesser, G., Schäffler, F., Palmetshofer, L., Springholz, G., Heiss, W.

Journal:

Journal of Applied Physics

Année:

2009

Langue:

english

Fichier:

PDF, 557 KB

english, 2009

24

One-dimensional transport of electrons in Si/Si0.7Ge0.3 heterostructures

M. Holzmann, D. Többen, G. Abstreiter, M. Wendel, H. Lorenz, J. P. Kotthaus, F. Schäffler

Année:

1995

Langue:

english

Fichier:

PDF, 362 KB

english, 1995

25

Variations of resonant tunneling properties with temperature in strained Si1−xGex/Si double-barrier structures

D. X. Xu, G. D. Shen, M. Willander, G. V. Hansson, J. F. Luy, F. Schäffler

Année:

1991

Langue:

english

Fichier:

PDF, 772 KB

english, 1991

26

Evolution of strain relaxation in compositionally graded Si1−xGex films on Si(001)

J. H. Li, E. Koppensteiner, G. Bauer, M. Hohnisch, H. Herzog, F. Schäffler

Année:

1995

Langue:

english

Fichier:

PDF, 348 KB

english, 1995

27

Properties of Si layers grown by molecular beam epitaxy at very low temperatures

Jorke, H., Kibbel, H., Schäffler, F., Casel, A., Herzog, H.-J., Kasper, E.

Journal:

Applied Physics Letters

Année:

1989

Langue:

english

Fichier:

PDF, 491 KB

english, 1989

28

Epitaxial regrowth of Sb implanted Si1−xGex alloy layers

Atzmon, Z., Eizenberg, M., Revesz, P., Mayer, J. W., Hong, S. Q., Schäffler, F.

Journal:

Applied Physics Letters

Année:

1992

Langue:

english

Fichier:

PDF, 604 KB

english, 1992

29

Size control and midinfrared emission of epitaxial PbTe∕CdTe quantum dot precipitates grown by molecular beam epitaxy

Groiss, H., Kaufmann, E., Springholz, G., Schwarzl, T., Hesser, G., Schäffler, F., Heiss, W., Koike, K., Itakura, T., Hotei, T., Yano, M., Wojtowicz, T.

Journal:

Applied Physics Letters

Année:

2007

Langue:

english

Fichier:

PDF, 454 KB

english, 2007

30

The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

Brehm, M., Grydlik, M., Groiss, H., Hackl, F., Schäffler, F., Fromherz, T., Bauer, G.

Journal:

Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 3.89 MB

english, 2011

31

Fabrication of n- and p-channel in-plane-gate transistors from Si/SiGe/Ge heterostructures by focused laser beam writing

Holzmann, M., Baumgartner, P., Engel, C., Nützel, J. F., Abstreiter, G., Schäffler, F.

Journal:

Applied Physics Letters

Année:

1996

Langue:

english

Fichier:

PDF, 277 KB

english, 1996

32

Stranski-Krastanow growth of tensile strained Si islands on Ge (001)

Pachinger, D., Groiss, H., Lichtenberger, H., Stangl, J., Hesser, G., Schäffler, F.

Journal:

Applied Physics Letters

Année:

2007

Langue:

english

Fichier:

PDF, 708 KB

english, 2007

33

Self-aligned fabrication of in-plane SiGe nanowires on rib-patterned Si (001) substrates

Chen, G., Springholz, G., Jantsch, W., Schäffler, F.

Journal:

Applied Physics Letters

Année:

2011

Langue:

english

Fichier:

PDF, 1.72 MB

english, 2011

34

Ge island formation on stripe-patterned Si(001) substrates

Zhong, Zhenyang, Halilovic, A., Mühlberger, M., Schäffler, F., Bauer, G.

Journal:

Applied Physics Letters

Année:

2003

Langue:

english

Fichier:

PDF, 541 KB

english, 2003

35

Diffuse x-ray scattering from misfit dislocations in SiGe epitaxial layers with graded Ge content

Holý, V., Li, J. H., Bauer, G., Schäffler, F., Herzog, H.-J.

Journal:

Journal of Applied Physics

Année:

1995

Langue:

english

Fichier:

PDF, 1.18 MB

english, 1995

36

Investigation of β-SiC precipitation in Si[sub 1−y]C[sub y] epilayers by x-ray scattering at grazing incidence

Kovats, Z., Metzger, T. H., Peisl, J., Stangl, J., Mühlberger, M., Zhuang, Y., Schäffler, F., Bauer, G.

Journal:

Applied Physics Letters

Année:

2000

Langue:

english

Fichier:

PDF, 259 KB

english, 2000

37

Quantum dots with coherent interfaces between rocksalt-PbTe and zincblende-CdTe

Heiss, W., Groiss, H., Kaufmann, E., Hesser, G., Böberl, M., Springholz, G., Schäffler, F., Leitsmann, R., Bechstedt, F., Koike, K., Harada, H., Yano, M.

Journal:

Journal of Applied Physics

Année:

2007

Langue:

english

Fichier:

PDF, 775 KB

english, 2007

38

Low-dose implantation of Sb in Si1−xGex epitaxial layers: Correlation between electrical properties and radiation damage

Atzmon, Z., Eizenberg, M., Shacham-Diamand, Y., Mayer, J. W., Schäffler, F.

Journal:

Journal of Applied Physics

Année:

1994

Langue:

english

Fichier:

PDF, 917 KB

english, 1994

39

Determination of the intersubband lifetime in Si/SiGe quantum wells

Heiss, W., Gornik, E., Hertle, H., Murdin, B., Knippels, G. M. H., Langerak, C. J. G. M., Schäffler, F., Pidgeon, C. R.

Journal:

Applied Physics Letters

Année:

1995

Langue:

english

Fichier:

PDF, 265 KB

english, 1995

40

Lateral quantum dots in Si∕SiGe realized by a Schottky split-gate technique

Berer, T., Pachinger, D., Pillwein, G., Mühlberger, M., Lichtenberger, H., Brunthaler, G., Schäffler, F.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 322 KB

english, 2006

41

Misfit dislocation gettering by substrate pit-patterning in SiGe films on Si(001)

Grydlik, Martyna, Boioli, Francesca, Groiss, Heiko, Gatti, Riccardo, Brehm, Moritz, Montalenti, Francesco, Devincre, Benoit, Schäffler, Friedrich, Miglio, Leo

Journal:

Applied Physics Letters

Année:

2012

Langue:

english

Fichier:

PDF, 1.93 MB

english, 2012

42

Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures

Thor, E., Mühlberger, M., Palmetshofer, L., Schäffler, F.

Journal:

Journal of Applied Physics

Année:

2001

Langue:

english

Fichier:

PDF, 369 KB

english, 2001

43

Intersubband optoelectronics in the InGaAs/GaAsSb material system

Detz, H., Andrews, A. M., Nobile, M., Klang, P., Mujagić, E., Hesser, G., Schrenk, W., Schäffler, F., Strasser, G.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

2010

Langue:

english

Fichier:

PDF, 698 KB

english, 2010

44

Photoluminescence of high-quality SiGe quantum wells grown by molecular beam epitaxy

Wachter, M., Schäffler, F., Herzog, H.-J., Thonke, K., Sauer, R.

Journal:

Applied Physics Letters

Année:

1993

Langue:

english

Fichier:

PDF, 594 KB

english, 1993

45

In-plane-gate transistors fabricated from Si/SiGe heterostructures by focused ion beam implantation

Többen, D., de Vries, D. K., Wieck, A. D., Holzmann, M., Abstreiter, G., Schäffler, F.

Journal:

Applied Physics Letters

Année:

1995

Langue:

english

Fichier:

PDF, 264 KB

english, 1995

46

Centrosymmetric PbTe∕CdTe quantum dots coherently embedded by epitaxial precipitation

Heiss, W., Groiss, H., Kaufmann, E., Hesser, G., Böberl, M., Springholz, G., Schäffler, F., Koike, K., Harada, H., Yano, M.

Journal:

Applied Physics Letters

Année:

2006

Langue:

english

Fichier:

PDF, 467 KB

english, 2006

47

Influence of thermal annealing on the photoluminescence from pseudomorphic Si[sub 1−y]C[sub y] epilayers on Si

Penn, C., Zerlauth, S., Stangl, J., Bauer, G., Brunthaler, G., Schäffler, F.

Journal:

Applied Physics Letters

Année:

1997

Langue:

english

Fichier:

PDF, 270 KB

english, 1997

48

Positioning of self-assembled Ge islands on stripe-patterned Si(001) substrates

Zhong, Zhenyang, Halilovic, A., Mühlberger, M., Schäffler, F., Bauer, G.

Journal:

Journal of Applied Physics

Année:

2003

Langue:

english

Fichier:

PDF, 747 KB

english, 2003

49

Strain relaxation in high electron mobility Si[sub 1−x]Ge[sub x]/Si structures

Li, J. H., Holy, V., Bauer, G., Schäffler, F.

Journal:

Journal of Applied Physics

Année:

1997

Langue:

english

Fichier:

PDF, 366 KB

english, 1997

50

High electron mobility in modulation-doped Si/SiGe quantum well structures

Schuberth, G., Schäffler, F., Besson, M., Abstreiter, G., Gornik, E.

Journal:

Applied Physics Letters

Année:

1991

Langue:

english

Fichier:

PDF, 634 KB

english, 1991